On optimization of manufacturing of instrumentation amplifier input
bias circuitry based on heterostructures to increase density of their
elements. Influence of miss-match induced stress

E.L. Pankratov
Page No . 1-27

In this paper we introduce an approach to increase density of field-effect transistors framework
instrumentation amplifier input bias circuitry. Framework the approach we consider manufacturing
the inverter in heterostructure with specific configuration. Several required areas of the
heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation
defects should by annealed framework optimized scheme. We also consider an approach to decrease
value of mismatch-induced stress in the considered heterostructure. We introduce an analytical
approach to analyze mass and heat transport in heterostructures during manufacturing of
integrated circuits with account mismatch-induced stress.
Keywords : instrumentation amplifier input bias circuitry; optimization of manufacturing;
analytical approach for modelling.