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Miniaturization and Packaging Concept in Power Amplifier using GaN device
for Space Applications


Kamaljeet Singh*, Dinesh Kumar, AV Nirmal, SV Sharma
Page No. 10-19


Abstract

This article details the concept of using gallium nitride devices for high power application in the
transmitter chain. The issue of thermal management is detailed along with the possible
configuration yielding the size reduction with the proposed approach. Practical approach of the
same is demonstrated for development of power amplifier chain for deep space mission
requirements along with the comparative analysis with the prevalent topologies. SSPA designed
using GaN device can replace expensive TWTA and have the added flexibility of designing at
desired frequencies with a single device.
Keywords : Power amplifier, Gallium Nitride (GaN), matching, High-electron-mobility-transistor,
packaging, thermal resistance


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