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Exciton states in Quasi - Zero - Dimensional Semiconductor Nanostruсtures: Theory


Sergey I. Pokutnyi1, Vladimir P. Dzyuba2, Yuriy N. Kulchnin2, Valentine A. Milichko 3
Page no. 5-17


Abstract

 The review analyzes the results of theoretical investigations of excitons states (electron - hole pairs states) in a quasi - zero - dimensional nanosystems consisting of spherical semiconductor nanocrystals (quantum dots) placed in transparent dielectric matrices. The theory of exciton states in a quantum dot  under conditions of dominating polarization interaction of an electron and a hole with a spherical (quantum dot – dielectric matrix) interface are developed. An shown, that the energy spectrum  of heavy hole in the valence band quantum dot is equivalent to the spectrum of hole carrying out oscillator vibrations  in the adiabatic electron potential. In the framework of the dipole approximation theory are developed interband absorption of light in quasi – zero – dimensional nanosystems. An shown,  that the absorption and emission edge of  quantum dots is formed by two transitions of comparable intensity from different hole size – quantization levels and into a lower electron size – quantization level. Propose a theoretical prospect of using hole transitions between equidistant series of quantum levels observed in nanocrystals for desining a nanolaser. The theory of an exciton formed from spatially separated electron and hole (the hole is in the quantum dot volume, and the electron is localized at the outer spherical quantum dot–dielectric matrix interface) is developed within the modified effective mass method. The effect of significantly increasing the exciton binding energy in quantum dots of  zinc selenide, synthesized in a borosilicate glass matrix, relative to that in a zinc selenide single crystal is revealed.

 

K  keywords: excitons, energy spectrum, exciton  binding energy, absorption of light, nanolaser.


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